2024/08/23 by Yuesong Liang, Wei Wang, Lin Fang +11 · 1 citation
Engineering · Materials Science · #Advancements in Semiconductor Devices and Circuit Design #Diamond and Carbon-based Materials Research #Semiconductor materials and devices
paper · doi:10.1109/led.2024.3448363
openalex publication_date 2024/08/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
The directly coupled hydrogen-terminated diamond FET logic (DCHDFL) circuit is fabricated. The E-mode and D-mode FETs are assigned as driver and load devices of the DCHDFL circuit to achieve inversion characteristics. The E-mode FET showcases high IDSmaxof 53.3mA/mm, VTHof -0.8 V, low SS of 98 mV/dec and on/off ratio of 109, which enable input/output logic level matching with a low drive/load ratio of 1.0. The peak gain of circuit increases from 12.57 to 36.3 V/V with VDDranging from -5 V to -25 V, which is the highest gain achieved of diamond inverters, due to the high on/off ratio and low SS of E-mode FET. This circuit exhibits proper functions up to 200 °C, demonstrating a good thermal stability. These results indicate the great potential and possibilities for diamond smart power integrated circuit application.