2025/11/03 by Wenchao Zhang, Ziyi Chen, Bo Liang +8
Engineering · Materials Science · #Diamond and Carbon-based Materials Research #Ferroelectric and Negative Capacitance Devices #Semiconductor materials and devices
paper · doi:10.1109/led.2025.3628358
openalex created_date 2025/11/03 · openalex publication_date 2025/11/03 · openalex updated_date 2026/07/29
This letter reports a high-voltage-gain hydrogen-terminated diamond logic inverter enabled by high-performance, high-kZrO2-gated diamond field-effect transistors (FETs). The ZrO2gate dielectric, with a high-kvalue of 20.3, ensures efficient electrostatic gating of the two-dimensional hole gas (2DHG) channel. This endows the driver FET with an ultrahigh on/off ratio of 2.13 1010and fast switching speed with a low subthreshold swing of 86 mV/dec, which are critical for rapid transitions between the logic states of inverter. Consequently, the developed logic inverter demonstrates full swing output, sharp switching behavior with a record-high voltage gain of 422 among diamond-based logic inverters, and 1 kHz operation. This work paves the way for the practical application of diamond transistors and integrated circuits.