2022/12/01 by Niloy Chandra Saha, Seong-Woo Kim, Seong‐Woo Kim +3 · 1 citation
Engineering · Materials Science · #Advancements in Semiconductor Devices and Circuit Design #Diamond and Carbon-based Materials Research #Semiconductor materials and devices
paper · doi:10.1109/led.2022.3226426
openalex publication_date 2022/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
In this letter, we report an NO2 p-type doped and Al2O3 bilayer passivated diamond metal–oxide–semiconductor field-effect transistor (MOSFET) fabricated on a misoriented heteroepitaxial diamond substrate. The MOSFET demonstrated a high breakdown voltage of 3659 V, the highest reported among diamond MOSFETs. MOSFETs with a gate length of2.5~μ mexhibited a maximum drain current density of 372 mA/mm and maximum available power density (Baliga’s figure-of-merit) of 173 MW/cm2. In addition, the maximum mobility was estimated to be187 \text cm^2/\text V⋅ s, and the subthreshold swing was 189 mV/dec. This study explores the prospects of misoriented heteroepitaxial diamonds in power electronic device applications.