2021/04/26 by Niloy Chandra Saha, Seong‐Woo Kim, Seong-Woo Kim +4 · 2 citations
Materials Science · Engineering · #Diamond and Carbon-based Materials Research #Semiconductor materials and devices #Advancements in Semiconductor Devices and Circuit Design
paper · doi:10.1109/led.2021.3075687
Diamond metal oxide semiconductor field effect transistors (MOSFETs) on high-quality heteroepitaxial diamond (Kenzan diamond®) with NO2p-type doping and an Al2O3passivation overlayer exhibited a high off-state breakdown voltage of −2608 V. The 100-nm-thick Al2O3passivation overlayer on the hole channel increased the high-voltage-handling capability of the MOSFETs by substantially suppressing the off-state drain leakage currents. The MOSFET showed a specific on-resistance of 19.74mΩ ⋅ cm2and a maximum drain current density of −288 mA/mm, with an extremely low gate leakage current < 10^-6mA/mm. The Baliga’s Figure-Of-Merits was experimentally determined to be 344.6 MW/cm2, and the maximum DC power density was observed to be 21.0 W/mm.