2022/04/04 by Niloy Chandra Saha, Seong-Woo Kim, Seong‐Woo Kim +2 · 2 citations
Materials Science · Engineering · #Diamond and Carbon-based Materials Research #Semiconductor materials and devices #Metal and Thin Film Mechanics
paper · doi:10.1109/led.2022.3164603
In this study, an Al2O3passivated, NO2p-type doped diamond metal–oxide–semiconductor field-effect transistor (MOSFET) was fabricated on a chemical mechanical planarized high-quality heteroepitaxial diamond (Kenzan diamond®) substrate. This MOSFET exhibited a low specific ON-resistance of 7.54mΩ ⋅ cm2and a high OFF-state breakdown voltage of −2568 V. The chemical mechanical planarization (CMP) was performed for 200 h on the diamond surface which effectively removed the subsurface damages resulting in a low resistive diamond surface. Thus, the MOSFET showed a high drain current density of −0.68 A/mm and a maximum available power density (Baliga’s figure-of-merit) of 874.6 MW/cm2—the highest reported value for diamond devices.