Weak localisation, interaction effects and the metallic phase in p-SiGe

1999/12/02 by P. T. Coleridge, Coleridge, P. T., A. S. Sachrajda +3
Physics and Astronomy · #FOS: Physical sciences #Quantum and electron transport phenomena #Semiconductor materials and interfaces #Strongly Correlated Electrons (cond-mat.str-el) #Surface and Thin Film Phenomena #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.cond-mat/9912041

Revised version with significant additions. 9 pages,12 eps figures Submitted to Physical Review B, November 2001

openalex publication_date 1999/12/02 · arxiv created 2001/12/21 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Magnetoresistance results are presented for p-SiGe samples on the metallic side of the B=0 metal-insulator transition. It was possible to separate the weak localisation and Zeeman interaction effects but the results could not be explained quantitatively within the framework of standard theories for quantum corrections of a weakly interacting 2-dimensional system. Analysis using a theory for interaction corrections at intermediate temperatures, recently proposed by Zala, Narozhny and Aleiner, provided values of the Fermi liquid parameter F₀^σ of order -0.5. Similar values also explain the linear increase of resistance with temperature characteristic of the metallic phase. e

Related

• Interaction effects and the metallic phase in p-SiGe
• Metallic and Insulating behaviour in p-SiGe at nu = 3/2
• Localization and electron-electron interaction effects in magnetoresistance of p-type Ge/Ge_1-xSi_x heterostructures
• Metal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis
• Weak-localization type description of conduction in the "anomalous" metallic state