2002/12/27 by Yu. G. Arapov, Arapov, Yu. G., G. I. Harus +11
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces #Silicon Nanostructures and Photoluminescence #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.cond-mat/0212612
arxiv created 2002/12/27 · openalex publication_date 2002/12/27 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge1-xSix heterostructures. The usual logarithmic temperature dependencies for zero magnetic field conductivity due to the weak localization (WL) and electron- electron interaction (EEI) effects take place in both samples. For one of the samples the negative MR is observed in a whole range of magnetic fields up to ~1T at T <=12K, but for the other sample the MR transforms from the negative to positive at B >= 0.2T and T >=1.3K. We attribute such a behavior to the interplay of two types of holes due to partial filling of the second subband. Extrapolation of the observed high-field parabolic MR to B = 0 allows to separate WL and EEI contributions to the total quantum corrections to conductivity at B = 0 resulting for both of our structures in that EEI part is ~2/3 and the WL part is ~1/3.