Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_1-xSi_x/Ge/Ge_1-xSi_x quantum well

2004/04/15 by Yu. G. Arapov, В. Н. Неверов, Arapov, Yu. G. +16
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Ga2O3 and related materials #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.cond-mat/0404355

arxiv created 2004/04/15 · openalex publication_date 2004/04/15 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_1-xSi_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) behavior of resistivity R(T) induced by a perpendicular magnetic field B. The revealed positive magnetoresistance scales as a function of B/T. We attribute this finding to a suppression of the triplet channel of electron-electron (hole-hole) interaction due to Zeeman splitting in the hole spectrum.

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