1999/03/31 by V. Senz, U. Doetsch, U. Gennser +5
Physics and Astronomy · #cond-mat.mes-hall
published as Annalen d. Physik, 8, Special Issue, 237-240, 1999 · 4 pages (RevTeX), 3 figures (postscript) replaced by version published in special issue of Annalen d. Physik
arxiv created 1999/11/29 · arxiv updated 2009/11/30
The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour. Values of 1 for the dynamical exponent and 2.85 for the correlation length exponent are obtained from scaling plots. No quenching of the metallic phase in a parallel magnetic field is observed. Since in our system there is an easy axis for magnetization, this result supports the hypothesis that the transition is related to spin interactions.