Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition

2001/07/23 by Renaud Leturcq, Leturcq, R., D. L’Hôte +15
Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Surface and Thin Film Phenomena

paper · pdf · doi:10.48550/arxiv.cond-mat/0107457

openalex publication_date 2001/07/23 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We study the resistivity vs. electric field dependence ρ(E) of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using ρ as a ``thermometer'' to obtain the effective temperature of the holes T<sub>e</sub>(E), we find that the ρ(E) dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible with previous measurements. The damping of the Shubnikov-de Haas oscillations gives the same T<sub>e</sub> values. Thus the ρ(E) dependence and the E-field ``scaling'' do not provide additional evidence for a quantum phase transition (QPT). We discuss how to study, in general, true E-field scaling and extract the ratio of the QPT characteristic lengths.

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