2000/11/03 by P. T. Coleridge, Coleridge, P. T., A. S. Sachrajda +3
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Strongly Correlated Electrons (cond-mat.str-el) #Surface and Thin Film Phenomena #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.cond-mat/0011067
13 pages, 9 figures. This supercedes, with significant additions, cond-mat/9912041
arxiv created 2000/11/03 · openalex publication_date 2000/11/03 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Magnetoresistance results are presented for p-SiGe samples on the metallic side of the B=0 metal-insulator transition. The results cannot be understood within the framework of standard theories for quantum corrections of a weakly interacting 2- dimensional system. In particular no logarithmic dependence on temperature is observed, at low fields, in either the longitudinal or Hall resistivities despite evidence in the magnetoresistance of weak localisation effects. Further, the Hall coefficient shows a strong logarithmic dependence on field. The results are better explain by renormalisation group theories and by an anomalous Hall effect associated with strong spin-orbit coupling in the presence of a background spin texture.