Sculpting the shape of semiconductor heteroepitaxial islands: from dots to rods

2007/01/31 by Jeremy T. Robinson, J. T. Robinson, D. A. Walko +25
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Nanowire Synthesis and Applications #Semiconductor materials and interfaces #Silicon Nanostructures and Photoluminescence #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0702003

accepted- Physical Review Letters; 12 pages, 4 figures

openalex publication_date 2007/01/31 · arxiv created 2007/02/01 · arxiv updated 2009/12/01 · openalex created_date 2021/11/08 · openalex updated_date 2026/07/28

Abstract

In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.

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