Alloying mechanisms for epitaxial nanocrystals

2007/01/29 by Marina S. Leite, G. Medeiros‐Ribeiro, Leite, M. S. +5
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and interfaces #Silicon Nanostructures and Photoluminescence #Silicon and Solar Cell Technologies

paper · pdf · doi:10.48550/arxiv.cond-mat/0701710

openalex publication_date 2007/01/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The different mechanisms involved in the alloying of epitaxial nanocrystals are reported in this letter. Intermixing during growth, surface diffusion and intra-island diffusion were investigated by varying the growth conditions and annealing environments during chemical vapor deposition. The relative importance of each mechanism was evaluated in determining a particular composition profile for dome-shaped Ge:Si (001) islands. For samples grown at a faster rate, intermixing during growth was reduced. Si surface diffusion dominates during H₂ annealing whereas Ge surface diffusion and intra-island diffusion prevail during annealing in a PH₃ environment.

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