The difference between Si and Ge(001) surfaces in the initial stages of growth

2002/05/28 by G. Brocks, Jacobus Hendrikus Snoeijer, J. H. Snoeijer +10
Engineering · Materials Science · Physics and Astronomy · #Optical Coatings and Gratings #Photonic and Optical Devices #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0205600

4 pages, 3 figures

arxiv created 2002/05/28 · arxiv updated 2009/11/30

Abstract

The initial stages of growth of Ge and Si on the Ge(001) surface are studied and compared to growth on the Si(001) surface. Metastable rows of diluted ad-dimers exist on both surfaces as intermediate stages of epitaxial growth. Unexpectedly, for Ge(001) these rows are found exclusively in the <310> directions, whereas on Si(001) the preferred direction is <110>. This qualitative difference between Si and Ge surfaces reflects the subtle difference in the chemistry of these two elements, which has direct consequences for epitaxial growth on these surfaces.

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