2015/10/02 by S. Arapan, Sergiu Arapan, Arapan, Sergiu +4
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Photonic and Optical Devices #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1510.00526
5 pages, 4 figures, submitted to Phys. Rev. Lett
arxiv created 2015/10/02 · openalex publication_date 2015/10/02 · arxiv updated 2015/10/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Ge hut clusters, which appear during heteroepitaxy of Ge on Si(001), are prototypical examples of islands formed through strain. Experimentally, complete facets are observed to form rapidly, though the mechanism is unknown. We model the growth of new faces on Ge hut clusters, using linear scaling DFT. We build realistic small huts on substrates, and show that the growth of \105\ facets proceeds from top-to-bottom, even for these small huts. The growth of the facet is driven by the reconstruction on the \105\ facet, and nucleates at the boundaries of the facet. We thus resolve any ambiguities in kinetic models of hut cluster growth.