2007/11/26 by Gianpiero Buscarino, G. Buscarino, Buscarino, G. · 1 citation
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Glass properties and applications #Luminescence Properties of Advanced Materials #Materials Science (cond-mat.mtrl-sci) #Other Condensed Matter (cond-mat.other) #Transition Metal Oxide Nanomaterials #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.48550/arxiv.0711.4029
PhD Thesis
arxiv created 2007/11/26 · openalex publication_date 2007/11/26 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In the present Ph.D. Thesis we report an experimental investigation on the effects of gamma- and beta-ray irradiation and of subsequent thermal treatment on many types of a-SiO2 materials, differing in the production methods, OH- and Al-content, and oxygen deficiencies. Our main objective is to gain further insight on the microscopic structures of the E'gamma, E'delta, E'alpha and triplet paramagnetic centers, which are among the most important and studied class of radiation induced intrinsic point defects in a-SiO2. To pursue this objective, we use prevalently the EPR spectroscopy. In particular, our work is focused on the properties of the unpaired electrons wave functions involved in the defects, and this aspect is mainly investigated through the study of the EPR signals originating from the interaction of the unpaired electrons with 29Si magnetic nuclei (with nuclear spin I=1/2 and natural abundance 4.7 %). In addition, in some cases of interest, OA measurements are also performed with the aim to further characterize the electronic properties of the defects. Furthermore, due to its relevance for electronics application, the charge state of the defects is investigated by looking at the processes responsible for the generation of the defects of interest. Once these information were gained, the possible sites that can serve as precursors for defects formation are deduced, with the definitive purpose to obtain in the future more radiation resistant a-SiO2 materials in which the deleterious effects connected with the point defects are significantly reduced.