2005/03/30 by L. Vaccaro, Vaccaro, L., M. Cannas +3
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Glass properties and applications #Luminescence Properties of Advanced Materials #Materials Science (cond-mat.mtrl-sci) #Photorefractive and Nonlinear Optics #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0503699
5 figures
arxiv created 2005/03/30 · openalex publication_date 2005/03/30 · arxiv updated 2009/12/01 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28
The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that the intensities of these optical bands are linearly correlated in agreement with the model in which they are assigned to a single defect. This finding allows to determine spectroscopic parameters related to optical transitions efficiency: the oscillator strength of the 4.8 eV results ~200 times higher than that of the 2.0 eV; the 1.9 eV luminescence quantum yield under 4.8 eV excitation is lower (by a factor ~3) than that under 2.0 eV excitation. These results are consistent with the energetic level scheme, proposed in literature for non bridging oxygen hole center, and account for the excitation/luminescence pathways occurring after UV and visible absorption