2007/03/02 by Fabrizio Messina, F. Messina, Messina, F. +2
Engineering · Materials Science · Physics and Astronomy · #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Laser Material Processing Techniques #Materials Science (cond-mat.mtrl-sci) #Silicon Nanostructures and Photoluminescence #Thin-Film Transistor Technologies #cond-mat.dis-nn #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0703063
15 pages, 3 figures, submitted to J. Phys. Chem. B
arxiv created 2007/03/02 · openalex publication_date 2007/03/02 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The passivation by diffusing H2 of silicon dangling bond defects (E' centers, induced by laser irradiation in amorphous SiO2 (silica), is investigated in situ at several temperatures. It is found that the reaction between E' center and H2 requires an activation energy of 0.38eV, and that its kinetics is not diffusion-limited. The results are compared with previous findings on the other fundamental paramagnetic point defect in silica, the non bridging oxygen hole center, which features completely different reaction properties with H2. Besides, a comparison is proposed with literature data on the reaction properties of surface E' centers, of E' centers embedded in silica films, and with theoretical calculations. In particular, the close agreement with the reaction properties of surface E' centers with H2 leads to conclude that the bulk and surface E' varieties are indistinguishable from their reaction properties with molecular hydrogen.