2008/04/28 by Gianpiero Buscarino, G. Buscarino, R. Boscaino +2
Materials Science · Physics and Astronomy · #Glass properties and applications #Luminescence Properties of Advanced Materials #Transition Metal Oxide Nanomaterials #cond-mat.dis-nn #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.77.155214
published as Physical Review B, Vol. 77, Number 15, Pages 155214 1-5, Year 2008 · 5 pages, 3 figures
openalex publication_date 2008/04/28 · arxiv created 2008/05/14 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the E_\ensuremathα^\ensuremath' point defect in amorphous silicon dioxide (a\text\ensuremath-SiO2). This defect has been studied in \ensuremathβ-ray irradiated and thermally treated oxygen-deficient a\text\ensuremath-SiO2 materials. Our results have pointed out that the E_\ensuremathα^\ensuremath' center is responsible for an OA Gaussian band peaked at \ensuremath∼5.8\phantom\rule0.3em0exeV and having a full width at half maximum of \ensuremath∼0.6\phantom\rule0.3em0exeV. The estimated oscillator strength of the related electronic transition is \ensuremath∼0.14. Furthermore, we have found that this OA band is quite similar to that of the E_\ensuremathγ^\ensuremath' center induced in the same materials, indicating that the related electronic transitions involve states highly localized on a structure common to both defects: the OSi^\mathbf\ensuremath⋅ moiety.