2009/10/28 by Yusuke Shuto, Y. Shuto, R. Nakane +15
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0910.5238
Presented at Intl. Conf. on Silicon Nano Devices in 2030, Tokyo, October 13-14, 2009, pp. 148-149
arxiv created 2009/10/28 · openalex publication_date 2009/10/28 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for semiconductor channel is established. However, this is not so easy challenge owing to ferromagnet/semiconductor-interface-related several problems. In this paper, we demonstrate pseudo-spin-MOSFET (PS-MOSFET) architecture that is a new circuit approach using an ordinary MOSFET and magnetic tunnel junction (MTJ) to reproduce the functions of spin transistors.