2014/09/07 by Tomoyuki Sasaki, Yuichiro Ando, Sasaki, Tomoyuki +13 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1409.2178
23 pages, 5 figures (To appear in Physical Review Applied), the first three authors equally contributed to this work
arxiv created 2014/09/07 · arxiv updated 2014/09/09
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in non-degenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observed the modulation of the Hanle-type spin precession signals, which is a characteristic spin dynamics in non-degenerate semiconductor. We obtained long spin transport of more than 20 μm and spin rotation, greater than 4π at RT. We also observed gate-induced modulation of spin transport signals at RT. The modulation of spin diffusion length as a function of a gate voltage was successfully observed, which we attributed to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to make avenues to create of practical Si-based spin MOSFETs.