Spin injection in Si-based ferromagnetic tunnel junctions with MgO/MgAl2O4 barriers: Experimental and theoretical investigation of barrier thickness-dependent spin tunneling efficiency

2025/07/14 by Baisen Yu, Shoichi Sato, Yu, Baisen +5
Physics and Astronomy · #Magnetic properties of thin films #Rare-earth and actinide compounds #Quantum and electron transport phenomena

paper · pdf · doi:10.48550/arxiv.2507.10001

Abstract

This repository contains the experimental data of the publication "Spin injection in Si-based ferromagnetic tunnel junctions with MgO/MgAl2O4 barriers: Experimental and theoretical investigation of barrier thickness-dependent spin tunneling efficiency ".

Citations

• Spin injection and detection in a Si-based ferromagnetic tunnel junction: A theoretical model based on the band diagram and experimental demonstration
• Electron spin transport in a metal-oxide-semiconductor Si two-dimensional inversion channel: Effect of hydrogen annealing on spin scattering mechanism and spin lifetime
• Spin transport in non-degenerate Si with a spin MOSFET structure at room temperature

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