Electron spin transport in a metal-oxide-semiconductor Si two-dimensional inversion channel: Effect of hydrogen annealing on spin scattering mechanism and spin lifetime

2022/08/03 by Sato, Shoichi, Tanaka, Masaaki, Nakane, Ryosho · 2 citations
#Applied Physics (physics.app-ph) #FOS: Physical sciences

paper · doi:10.48550/arxiv.2208.01798

Abstract

Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

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