2016/06/21 by Patrizio Graziosi, Graziosi, Patrizio
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1606.06445
arxiv created 2016/06/21 · arxiv updated 2016/06/22
We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of the spin sub-bands and feature complete spin polarization at finite temperature. We present an analytical model of the device and comment the properties relevant for devices applications. Our results boost SGS as a new paradigm for the spin MOSFET concept.