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Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach

2003/12/10 by Dmitri E. Nikonov, Nikonov, Dmitri E., George I. Bourianoff +1
Computer Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Neural Networks and Applications #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0312243

34 pages, PDF file

arxiv created 2003/12/10 · openalex publication_date 2003/12/10 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large magnetized current is extracted. Therefore spin gain of more than 1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via Semiconductor Bloch Equations.

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