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Theory of magnetic bipolar transistors

2002/11/27 by Jaroslav Fabian, Fabian, Jaroslav, Igor Zutic +3
Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #cond-mat

paper · pdf · doi:10.48550/arxiv.cond-mat/0211639

5 pages, 3 figures

arxiv created 2002/11/27 · arxiv updated 2009/11/30

Abstract

The concept of a magnetic bipolar transistor (MBT) is introduced. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin in MBTs can be induced by external means (electrically or optically). The theory of ideal MBTs is developed and discussed in the forward active regime where the transistors can amplify signals. It is shown that source spin can be injected from the emitter to the collector. It is predicted that electrical current gain (amplification) can be controlled effectively by magnetic field and source spin.

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