2003/10/08 by Emmanuel I. Rashba, É. I. Rashba, Rashba, Emmanuel I.
Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0310164
4 pages, 1 figure
arxiv created 2003/10/08 · openalex publication_date 2003/10/08 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The high efficiency of a tunnel magnetic transistor as a source of\nspin-polarized electrons has been proven recently [X. Jiang it et al., Phys.\nRev. Lett. bf 90, 256603 (2003)]. A concept of this device based on an\nactive group of hot electrons controlling the collector current and\nexperiencing predominantly inelastic scattering in the base is developed. It\ntakes into account the interconnection between the injection and filtering of\nspin-polarized electrons in different elements of the device. Explicit\nexpressions for the parameters of the device in terms of the basic parameters\nof the system are presented.\n