2022/08/10 by P. Pfeffer, Pfeffer, Pawel
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2208.05188
openalex publication_date 2022/08/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel through the forbidden gap Eg of the channel to the conduction band of the drain. The tunneling current J calculations made at helium temperature for the example InAs-InAs-InAs, Au-GaSe-Au and Al-AlN-Al structures show that for a constant source-drain voltage, VC, of several mV, changes in the gate voltage, VG, applied to the channel within the voltage range of 0 - Eg/2e change J by even 10 orders of magnitude. Unlike the existing solutions such as tunnel field-effect-transistor (TFET), the proposed device uses the change of VG (gate voltage), i.e. the change of the electrostatic potential in the channel, to modify the imaginary wave vector kz of tunnel current electrons. Consequently, the gate voltage controls the damping force of the electrons wave functions and thus the magnitude of the tunneling current, J. The effect of increasing temperature, T, on J(VG) relation was also tested. It was found that only in structures with a wide forbidden channel gap this effect is insignificant (at least up to T=300 K).