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Shuttling of Spin Polarized Electrons in Molecular Transistors

2015/07/21 by O. A. Ilinskaya, S. I. Kulinich, Ilinskaya, O. A. +9
Engineering · Materials Science · Physics and Astronomy · #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena

paper · pdf · doi:10.48550/arxiv.1507.05813

openalex publication_date 2015/07/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to occur for a finite interval of external magnetic field strengths. The lower critical magnetic field is determined by the degree of spin polarization and it vanishes as the spin polarization approaches 100%. The feasibility of detecting magnetic shuttling in a C60-based molecular transistor with magnetic (Ni) electrodes is discussed [A.~N.~Pasupathy et al., Science 306, 86 (2004)].

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