2004/08/05 by B. J. Kowalski, B.J. Kowalski, I.A. Kowalik +17
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Metal and Thin Film Mechanics #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0408111
11 pages, 3 figures
openalex publication_date 2004/08/05 · arxiv created 2004/10/28 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.