2005/04/04 by J. Sadowski, Sadowski, J., M. Adell +18
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0504074
12 pages, 4 figures
arxiv created 2005/04/04 · openalex publication_date 2005/04/04 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnAs, are smooth and well-ordered (1x2), and are well suited for continued epitaxial growth.