2006/01/26 by J. Sadowski, J. Z. Domagala, Sadowski, J. +20
Materials Science · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0601623
17 pages including 6 figures
openalex publication_date 2006/01/26 · arxiv created 2006/01/29 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic capping at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn interstitials from GaMnAs volume.