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Electron spectroscopic studies of nanowires formed by (GaMn)As growth on GaAs(111)B

2009/07/01 by J. Adell, I. Ulfat, Intikhab Ulfat +8
Engineering · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Nanowire Synthesis and Applications #Surface and Thin Film Phenomena #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.0907.0247

14 pages, 4 figures

arxiv created 2009/07/01 · openalex publication_date 2009/07/01 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Valence band photoemission with photon energies around the Mn2p excitation threshold has been used to study the development of nanowires catalyzed by MnAs particles. A gradual change in the spectra with increasing nanowire length is observed, such that the resonant photoemission eventually dominates over the Auger decay channel. The change is ascribed to dilution of Mn, showing that Mn is transferred from the MnAs particles into the nanowires.

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