Mn as surfactant for the self-assembling of Al_xGa_1-xN/GaN layered heterostructures

2014/11/11 by Thibaut Devillers, Li Tian, Devillers, Thibaut +9
Materials Science · Physics and Astronomy · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1411.3006

arxiv created 2014/11/11 · arxiv updated 2014/11/13

Abstract

The structural analysis of GaN and Al_xGa_1-xN/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process, and in particular the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al_xGa_1-xN on GaN. Moreover, the doping with Mn promotes the formation of layered Al_xGa_1-xN/GaN superlattice-like heterostructures opening wide perspective for controlling the segregation of ternary alloys during the crystal growth and for fostering the self-assembling of functional layered structures.

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