2004/02/24 by Andrey V. Vasev, Vasev, Andrey V., Sergey I. Chikichev +2
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Phase-change materials and chalcogenides #Photorefractive and Nonlinear Optics #Silicon Nanostructures and Photoluminescence #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0402592
7 pages, 5 figures Proceedings of the Fifth International Conference Single Crystal Growth and Heat & Mass Transfer (ICSC-03), Obninsk, Russia, pp.285-291
arxiv created 2004/02/24 · openalex publication_date 2004/02/24 · arxiv updated 2009/12/01 · openalex created_date 2022/10/02 · openalex updated_date 2026/07/28
From in-situ ellipsometric measurements during condensation of As4 molecular\nbeam on GaAs(001) substrate the arsenic sticking coefficient was determined.\nFor the substrate with Ga-rich surface reconstruction at 60C the sticking\ncoefficient was found to be 7x10-3, whereas for the surface of amorphous\narsenic this coefficient was only 8x10-4. Kinetic studies of As sublimation\nwere also performed and activation energy for the process was obtained. For\namorphous As films grown from As2 beam the activation energy was found to be\nDeltaE=1.84+-0.03eV, which is 0.39eV higher than the enthalpy of solid-vapor\nphase transition. Temperature dependence of evaporation coefficient for\namorphous As was determined in the 230-290C range.\n