2002/02/05 by Shiro Tsukamoto, Tsukamoto, Shiro, Markus Pristovsek +9
Engineering · Materials Science · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Atomic and Molecular Clusters (physics.atm-clus) #Chemical Physics (physics.chem-ph) #FOS: Physical sciences #Quantum Dots Synthesis And Properties #Semiconductor Quantum Structures and Devices #physics.atm-clus #physics.chem-ph
paper · pdf · doi:10.48550/arxiv.physics/0202013
11 pages, 5 figures
arxiv created 2002/02/05 · openalex publication_date 2002/02/05 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed simultaneously. With a substrate temperature of 440 C and an As4 partial pressure of 2x10-6 torr, reflection high energy electron diffraction patterns and reflectance anisotropy spectra confirm a c(4x4) As-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that continual attachment / detachment of As molecules to and from the surface produces the observed dynamic behavior.