2025/10/09 by Ding‐Ming Huang, Huang, Ding-Ming, Jian‐Huan Wang +9
Engineering · Materials Science · #Electron and X-Ray Spectroscopy Techniques #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2510.07970
openalex publication_date 2025/10/09 · openalex created_date 2025/10/18 · openalex updated_date 2026/07/28
An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling microscopy (STM), we demonstrate an atomically resolved lateral periodic change of the electron reflectivity at the Al/Ge interface. The variation of electron reflectivity is up to 24% in lateral 2 nm. We speculate that the change of reflectivity results from the local electronic states at the Al/Ge interface. This phenomenon provides an atomically non-destructive method for detecting the buried interfacial states in hetero-structures by STM.