2025/02/04 by Ya-Jie Wu, Wu, Y. Y., Lan Mu +19
Earth and Planetary Sciences · Physics and Astronomy · #FOS: Physical sciences #High-pressure geophysics and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and interfaces #Strongly Correlated Electrons (cond-mat.str-el) #Superconductivity (cond-mat.supr-con) #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.2502.01955
openalex publication_date 2025/02/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report high-pressure Raman spectra and resistance measurements of black arsenic (b-As) up to 58 GPa, along with phonon density of states (DOS) and enthalpy calculations for four reported arsenic phases up to 50 GPa. It is found that metastable b-As transforms into gray arsenic (g-As) phase at a critical pressure of 1.51 GPa, followed by subsequent transitions to simple cubic arsenic (c-As) and incommensurate host-guest arsenic (hg-As) phases at 25.9 and 44.8 GPa, respectively. Superconductivity emerges above 25 GPa in the c-As phase, with the superconducting transition temperature (T\rmc) remaining nearly a constant of 3 K. Upon further compression, T\rmc steeply increases to a higher value around 4.5 K in the incommensurate hg-As phase above 43 GPa. We use our results to update the structural and superconducting phase diagrams under pressure for the novel semiconductor, black arsenic.