Arsenic-flux dependence of surface morphology in InAs homoepitaxy

2024/09/25 by Akihiro Ohtake, Takuya Kawazu, Takaaki Mano
#III-V semiconductors #molecular beam epitaxy #scanning tunneling microscopy #surface reconstructions

paper · doi:10.48505/nims.4772

Abstract

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 42 [6] (2024)

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