1997/08/14 by L. Canali, J. W. G. Wildöer, Canali, L. +7
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Surface and Thin Film Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/9708098
7 pages, 5 figures. Se also http://vortex.tn.tudelft.nl/mensen/leok/papers/
openalex publication_date 1997/08/14 · arxiv created 1997/08/25 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The properties of InAs (110) surfaces have been investigated by means of low-temperature scanning tunneling microscopy and spectroscopy. A technique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a surface. Tunneling spectroscopy at 4.2 K shows the presence of 2D subbands in the accumulation layer. Measurements in high-magnetic field demonstrate Landau quantization of the energy spectrum, both in the 2D subbands and the 3D bulk conduction band.