1999/05/12 by A. Depuydt, Depuydt, A., C. Van Haesendonck +9
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/9905159
3 pages, 4 figures, published in Appl. Phys. A 66, 171 (1998)
arxiv created 1999/05/12 · arxiv updated 2009/11/30
We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe two major types of atomic scale defects which can be identified as S dopant atoms and as As vacancies, respectively. The strong bias voltage dependence of the STM image of the impurities can be explained in terms of resonant tunneling through localized states which are present near the impurity.