2003/04/10 by X. Lopez-Lozano, Xóchitl López-Lozano, Lopez-Lozano, X. +5
Engineering · Physics and Astronomy · #Advanced Chemical Physics Studies #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Nuclear physics research studies #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0304253
6 pages + 3 figures
arxiv created 2003/04/10 · openalex publication_date 2003/04/10 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The electronic properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We calculate the surface electronic band structure which is studied as a function of the structural parameters of the surface. We describe and discuss the electronic character of the surface electronic states and we compare with other theoretical approaches, and with experimental observations. Finally, we discuss which atomic model better resembles the available experimental data.