A Dynamically Configurable Silicon Nanowire Field Effect Transistor based on Electrically Doped Source/Drain

2014/12/16 by Chitrakant Sahu, Sahu, Chitrakant, Avinash Lahgere +3
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Integrated Circuits and Semiconductor Failure Analysis #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.1412.4975

arxiv created 2014/12/16 · openalex publication_date 2014/12/16 · arxiv updated 2014/12/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices, high-performance MOSFET and low-power TFET, for computational and power efficient system on chip (SoC) products. The calibrated 3D-TCAD simulation results validate characteristics and functionalities of the configurable FET, and showed good consistency with the static conventional MOSFET (or TFET).

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