2014/07/09 by Mayank Chakraverty, Chakraverty, Mayank
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Computational Engineering #Emerging Technologies (cs.ET) #FOS: Computer and information sciences #FOS: Physical sciences #Finance #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #Semiconductor materials and devices #and Science (cs.CE)
paper · pdf · doi:10.48550/arxiv.1407.2358
openalex publication_date 2014/07/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
As the conventional silicon metal-oxide-semiconductor field-effect transistor\n(MOSFET) approaches its scaling limits; many novel device structures are being\nextensively explored. Among them, the silicon nanowire transistor (SNWT) has\nattracted broad attention. To understand device physics in depth and to assess\nthe performance limits of SNWTs, simulation is becoming increasingly important.\nThe objectives of this work are: 1) to theoretically explore the essential\nphysics of SNWTs (e.g., electrostatics, transport and band structure) by\nperforming computer-based simulations, and 2) to assess the performance limits\nand scaling potentials of SNWTs and to address the SNWT design issues. The\ncomputer based simulations carried out are essentially based on DFT using NEGF\nformalism. A silicon nanowire has been modeled as PN diode (Zener Diode), PIN\ndiode, PIP & NIN diode configurations by selectively doping the nanowire and\nsimulated by biasing one end of the nanowire to ground and sweeping the other\nend of the nanowire from -1 V to 1 V to obtain the electrical characteristics\nof the respective diodes. In order to determine the effectiveness of the\nmodeled diodes in silicon nanowire, the same diodes have been modeled using a\ngermanium nanowire by selective doping and simulated in the same manner to\nobtain the electrical characteristics of the germanium nanowire based diodes\nwhich has been used as a reference to analyze the characteristics obtained\nusing silicon nanowire. The modeled diodes are extremely small in dimension\nwhen compared to the conventional bulk silicon and germanium based diodes. This\nwork is followed by modeling and simulation of a gate all around nanowire field\neffect transistor using two different gate dielectrics, followed by temperature\ndependence of the nanowire FET characteristics and the off state current and\nconductance variation using the two dielectrics.\n