Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

2023/10/04 by Uedono, Akira, Sakurai, Hideki, Uzuhashi, Jun +10
#gallium nitride #positron #vacancy

paper · doi:10.48505/nims.4234

Abstract

Proceedings of SPIE - The International Society for Optical Engineering. 12421 (2023)

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