1995/10/01 by Akira Uedono, S. Nanao, Susumu Nanao +6 · 4 citations
Chemistry · Engineering · Materials Science · #Annihilation #Annihilation radiation #Atomic physics #Chemistry #Condensed matter physics #Copper Interconnects and Reliability #Doppler broadening #Electron #Ion #Materials science #Metallurgy #Muon and positron interactions and applications #Nuclear physics #Physics #Plasma Diagnostics and Applications #Positron #Positron annihilation #Spectral line #Tin #Vacancy defect
paper · doi:10.1143/jjap.34.5711
published in Japanese Journal of Applied Physics 34(10R), 5711 (Institute of Physics)
openalex publication_date 1995/10/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/11
Vacancy-type defects in nonstoichiometric TiN x films (0.901≤ x ≤1.04) grown by a reactive ion-plating method were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured as a function of incident positron energy. In the TiN x films, positrons mainly annihilated from the trapped state by vacancy-type defects. In the subsurface region ( <200 nm), two annihilation modes associated with the annihilation of positrons in vacancy clusters and in voids located at grain boundaries were observed. The species of vacancy clusters was found to be influenced by nonstoichiometric conditions. For ion-implanted TiN films, the importance of the focusing collision mechanism in superlattice structures was discussed.