Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation

2025/03/01 by Akira Uedono, Ryo Tanaka, Shinya Takashima +9
#gallium nitride

paper · doi:10.48505/nims.4498

Abstract

physica status solidi (b). 261 [5] (2024)

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