Tunneling magnetoresistance in a junction made of X-wave magnets with X=p,d,f,g,i

2025/09/21 by Ezawa, Motohiko · 3 citations
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · doi:10.48550/arxiv.2509.16867

Abstract

We investigate the tunneling magnetoresistance (TMR) of a bilayer system made of X-wave magnets with X=p,d,f,g,i, where X=d,g,i corresponds to altermagnets. A universal analytic formula is derived for the TMR ratio. It is proportional to \vert J\vert /( N_XΓ) for small Γ, where N_X is the number of the nodes of the X% -wave magnet, J is the strength of the X-wave magnet, and Γ is the self-energy. It is contrasted with the TMR ratio made of ferromagnets, where it is proportional to J²/Γ² for small Γ. Therefore, the TMR ratio is larger in ferromagnets for \vert J\vert >Γ. However, the X-wave magnets are expected to achieve high-speed and ultra-dense memory owing to the zero net magnetization.

Cited by

• Quantum geometry and X-wave magnets with X=p,d,f,g,i
• Néel vector controlled charge and spin transport in altermagnetic junctions
• Fourth-order and six-order nonlinear spin current rectifier in three-dimensional h-wave and j-wave odd-parity magnet

Related

• Tunnel magnetoresistance of magnetic junctions with cubic symmetry of the layers
• Tunneling Magnetoresistance Effect in Altermagnets
• Theory for Tunnel Magnetoresistance Oscillation
• Approaches to tunnel magnetoresistance effect with antiferromagnets
• Tunnel magnetoresistance of Fe3O4/MgO/Fe nanostructures