2010/12/18 by S. G. Chigarev, É. M. Épshteǐn, Chigarev, S. G. +6
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Multiferroics and related materials #ZnO doping and properties
paper · pdf · doi:10.48550/arxiv.1012.4089
openalex publication_date 2010/12/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.