2006/11/29 by A. N. Grigorenko, K. S. Novoselov, Grigorenko, A. N. +3
Physics and Astronomy · #FOS: Physical sciences #Other Condensed Matter (cond-mat.other) #cond-mat.other
paper · pdf · doi:10.48550/arxiv.cond-mat/0611751
17 pages, 4 figures
arxiv created 2006/11/29 · arxiv updated 2009/12/01
We report a room temperature tunneling anisotropic magnetoresistance in Co/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior to forming the Al2O3 layer. A significant change in a tunnel magnetoresistance is observed when the layer magnetizations are rotated collinearly in the junction plane by an applied external field. The angular dependence of the tunneling anisotropic magnetoresistance could be explained by the presence of an antiferromagnetic oxide layer formed within the barrier.